| 摘要 |
A method for fabricating a metal-insulator-metal (MIM) capacitor of a semiconductor device is provided. The method includes simultaneously patterning a lower metal film pattern and a dielectric film pattern to form a first structure in a MIM capacitor region and a second structure in a metal line region, removing the dielectric film pattern in the metal line region, forming a second insulating film to cover the dielectric film pattern in the MIM capacitor region and the lower metal line film pattern in the metal line region, simultaneously forming a trench that exposes the dielectric film pattern in the MIM capacitor region and a via hole that exposes the lower metal line film pattern in the metal line region by passing through the second insulating film, and forming an upper metal electrode film pattern and a via contact to respectively bury the trench and the via hole.
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