| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which reduces the mounting area and the number of components, and prevents power semiconductors from heating high per component. <P>SOLUTION: The semiconductor device comprises second trenches 11 buried with an insulator 21 extending to a collector layer 20 from the first main surface of a semiconductor substrate 1; two regions 12, 13 surrounded by the second trenches like a square each; a p-buffer layer 23 between the outer edges of the first main surface regions 12, 13 and first trenches, a first and second insulated gate type bipolar transistors each of a longitudinal semiconductor composed of an emitter region 17 and an emitter electrode 19; and third double square-shaped trenches 22 buried with an insulator extending from a second main surface to the p-buffer layer like so as to surround the two square regions. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
