| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve misadvantage caused by bonding shock and probe operation, and can directly connect bonding wire to bonding pad on direct active region by means of fail-safe structure. <P>SOLUTION: Two or more power element unit cells are arranged on the surface of the silicon substrate 1 of the semiconductor device H1. On a current collection electrode 4, passivation 5 between layers is formed. To the passivation 5 between layers, two or more openings 5k are arranged mutually adjacent to each other. This structure forms impact-absorbing beams 5h by passivation 5 between the adjacent openings 5k. Thick film electrode 6 linked to current collection electrode 4 is formed through two or more openings 5k. In order to make bonding connection to thick film electrode 6, the last passivation 7 is opened at the upper parts in a plurality of the openings 5k. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
