发明名称 |
Semiconductor thin film and process for production thereof |
摘要 |
To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.
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申请公布号 |
US2006118036(A1) |
申请公布日期 |
2006.06.08 |
申请号 |
US20060342602 |
申请日期 |
2006.01.31 |
申请人 |
HITACHI, LTD. |
发明人 |
TAKEDA KAZUO;GOTOU JUN;SAITO MASAKAZU;OHKURA MAKOTO;SATOU TAKESHI;FUKUDA HIROSHI;SHIBA TAKEO |
分类号 |
C30B23/00;H01L21/20;C30B13/00;C30B25/00;C30B28/12;C30B28/14;H01L21/336;H01L29/786 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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