| 摘要 |
A method of forming a capacitor having a capacitor dielectric layer comprising ABO<SUB>3</SUB>, where "A" is selected from the group consisting of Sn and Group IIA metal elements and mixtures thereof, where "B" is selected from the group consisting of Group IVA elements and mixtures thereof, includes providing a sputtering target comprising ABO<SUB>3 </SUB>and a substrate within a chamber. A sputtering gas is fed to the chamber under subatmospheric pressure conditions to sputter the target and physical vapor deposit an ABO<SUB>3</SUB>-comprising dielectric layer over the substrate. During the feeding, subatmospheric pressure is varied to produce different concentrations of B at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B. The ABO<SUB>3 </SUB>comprising dielectric layer is incorporated into a capacitor, with such layer comprising a capacitor dielectric layer of the capacitor and having a dielectric constant of at least 20 in the capacitor.
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