发明名称 HIGH SPEED AND LOW POWER SRAM MACRO ARCHITECTURE AND METHOD
摘要 <p>Circuits and methods are described for reducing leakage power in integrated circuit devices whose logic transistors (e.g., logic circuits, latches, and/or output stages) are powered through one or more controllable source transistors. By way of example the circuit has at least one source transistor (e.g., power, ground, or both power and ground) for selectively supplying power to a stage within an integrated circuit device. A means for modulating the state of the source transistor operates in response to changes in the operating mode of the integrated circuit to turn on the source transistor prior to turning on the logic transistors, and/or to turn off the source transistor after turning off the logic transistors. In one aspect, the delay prior to turning off the logic transistors can be sufficiently extended to reduce power consumption arising from unnecessarily turning on and off the source transistors for short periods.</p>
申请公布号 WO2006052992(A2) 申请公布日期 2006.05.18
申请号 WO2005US40478 申请日期 2005.11.07
申请人 ZMOS TECHNOLOGY, INC.;SOHN, JOENG-DUK;KIM, YOUNG, TAE 发明人 SOHN, JOENG-DUK;KIM, YOUNG, TAE
分类号 G06F11/00 主分类号 G06F11/00
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