NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHODS OF WIRING, READING AND ERASING THEREFOR

摘要

PROBLEM TO BE SOLVED: To accelerate a data transfer rate in data writing in a p-channel MONOS memory cell.

SOLUTION: In order to operate a bit line in GND-VCC, a back gate voltage of 4 V is applied to a cell well in programming. In order to accelerate switching of a program mode and a verify mode, verifying is also performed while applying the back gate voltage of 4 V. Therefore, on verifying, a voltage (absolute value) greater than -5 V of a reading mode is applied to a word line (gate).

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