发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD OF WAFER
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus coping with variations in a plasma density generated by various causes and having high controllability over the variations in the plasma density. SOLUTION: The plasma processing apparatus includes: a reaction chamber for generating plasma and applying plasma processing to an object to be processed; an extract section for extracting an emission amount from the plasma; and a control section for variably controlling one of groups of parameters used for controlling the plasma on the basis of the emission amount within a predetermined range of processing conditions to control the state of the plasma. Since the light emission from the plasma is detected without spectroscoping, the plasma density strongly depending on the intensity of the light emission from the plasma is controlled by ensuring a high S/N more than prior arts for controlling the plasma density through the spectroscoping. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006093519(A) 申请公布日期 2006.04.06
申请号 JP20040278993 申请日期 2004.09.27
申请人 SEIKO EPSON CORP 发明人 KANETANI SUMIKO
分类号 H01L21/3065;C23C16/52 主分类号 H01L21/3065
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