发明名称 |
Technique for boron implantation |
摘要 |
A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
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申请公布号 |
US2006063360(A1) |
申请公布日期 |
2006.03.23 |
申请号 |
US20050227079 |
申请日期 |
2005.09.16 |
申请人 |
SINGH VIKRAM;WINDER EDMUND J;PERSING HAROLD M;MILLER TIMOTHY J;FANG ZIWEI;GUPTA ATUL |
发明人 |
SINGH VIKRAM;WINDER EDMUND J.;PERSING HAROLD M.;MILLER TIMOTHY J.;FANG ZIWEI;GUPTA ATUL |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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