NANOTUBE TRANSISTOR AND RECTIFYING DEVICES

摘要

Single-walled carbon nanotube transistor and rectifying devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure (1120) may be anodized aluminum oxide or another material. Electrodes for source (1140) and drain (1150) of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A gate region (1110) may be provided one end or both ends of the porous structure. The gate electrode may be formed into the porous structure. A transistor of the invention may be especially suited for power transistor or power amplifier applications.