发明名称 FAR INFRARED RAY HEATER
摘要 PURPOSE:To obtain a far infrared ray heater with excellent heat resistance and excellent adhesion at a high temperature by forming a far infrared ray radiation layer made of SiO2 film containing ZrO2.SiO2 of 1mum or less as a far infrared ray radiation material on the surface of a quartz tube or a crystallized glass tube. CONSTITUTION:A solution mainly made of silicone methoxide and containing ZrO2.SiO2 of 1mum or less and water are mixed with the preset ratio, and the mixture is coated on the surface of a quartz tube 1 by the spray method. It is then baked at 200 deg.C to form a far infrared ray radiation layer 2 mainly made of SiO2 and containing ZrO2.SiO2 as a far infrared ray radiation material on the surface of the quartz tube 1. An iron-chrome-aluminum wire 3 is wound in a coil shape, electricity extracting sections 4 are provided on both ends, it is inserted to the center of the quartz tube 1 formed with the radiation layer 2 to complete a far infrared ray heater. This far infrared ray heater has excellent heat resistance and excellent adhesion at a high temperature.
申请公布号 JPS6435887(A) 申请公布日期 1989.02.06
申请号 JP19870192937 申请日期 1987.07.31
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAWANISHI HIDESATO
分类号 H05B3/10;C03C17/25;H05B3/44 主分类号 H05B3/10
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