发明名称 |
Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capability |
摘要 |
An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided. The epitaxial structure has an additional anti-ESD thin layer on top of the p-type contact layer within traditional GaN-based LEDs, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg<3.4 eV), undoped aluminum-indium-gallium-nitrides (AlInGaN). This anti-ESD thin layer greatly improves the GaN-based LEDs' reverse withstanding voltage and resistivity to ESD, which in turn extends the GaN-based LEDs' operation life significantly.
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申请公布号 |
US2006049424(A1) |
申请公布日期 |
2006.03.09 |
申请号 |
US20040964350 |
申请日期 |
2004.10.12 |
申请人 |
WU LIANG-WEN;TU RU-CHIN;YU CHENG-TSANG;WEN TZU-CHI;CHIEN FEN-REN |
发明人 |
WU LIANG-WEN;TU RU-CHIN;YU CHENG-TSANG;WEN TZU-CHI;CHIEN FEN-REN |
分类号 |
H01L33/02;H01L33/04;H01L33/32;H01L33/42 |
主分类号 |
H01L33/02 |
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