发明名称 Capacitor supported precharging of memory digit lines
摘要 Circuits and methods are provided for precharging pairs of memory digit lines. The final precharge voltage of the digit lines is different from the average of the digit line voltages prior to precharging. The final precharge voltage can be set by appropriately selecting the size of a capacitor in the precharge circuit.
申请公布号 US2006034113(A1) 申请公布日期 2006.02.16
申请号 US20040958936 申请日期 2004.10.05
申请人 MICRON TECHNOLOGY, INC. 发明人 TOMISHIMA SHIGEKI
分类号 G11C11/24 主分类号 G11C11/24
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