METHOD FOR FORMING A SOURCE/DRAIN JUNCTION IN A SEMICONDUCTOR SILICIDE MANUFACTURING PROCEDURE,申请号KR20030054584-传众专利搜索

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发明名称	METHOD FOR FORMING A SOURCE/DRAIN JUNCTION IN A SEMICONDUCTOR SILICIDE MANUFACTURING PROCEDURE
摘要
申请公布号	KR100551337(B1)	申请公布日期	2006.02.09
申请号	KR20030054584	申请日期	2003.08.07
申请人		发明人
分类号	H01L21/24	主分类号	H01L21/24
代理机构		代理人
主权项
地址

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