| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging unit capable of expanding a dynamic range, without increasing pixel size or delaying the operation time. SOLUTION: Each of a plurality of unit pixels 1 arranged in an imaging area is equipped with a photodiode 2 which photoelectrically converts light incident on the pixel to accumulate signal charges, and a couple of transfer transistors 3 and 4 which transfer the signal charges accumulated in the photodiode 2 to a floating diffusion FD. The solid-state imaging device is so constituted that the 1st transfer transistor 3 transfers signal charges to a floating diffusion FD, provided in the unit pixel, including the 1st transfer transistor, and the 2nd transfer transistor 4 transfers signal charges to a floating diffusion FD provided in the unit pixel of a next line vertically adjacent to the unit pixel, including the 2nd transfer element. COPYRIGHT: (C)2006,JPO&NCIPI
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