发明名称 |
PROCESS TO IMPROVE TRANSISTOR DRIVE CURRENT THROUGH THE USE OF STRAIN |
摘要 |
The present invention provides, in one embodiment, a P-type Metal Oxide Semiconductor (PMOS) device (100). The device (100) comprises a tensile-strained silicon layer (105) located on a silicon-germanium substrate (110) and silicon-germanium source/drain structures (135, 140) located on or in the tensile-strained silicon layer (105). The PMOS device (100) further includes a channel region (130) located between the silicon-germanium source/drain structures (135, 140) and within the tensile-strained silicon layer (105). The channel region (130) has a compressive stress (145) in a direction parallel to an intended current flow (125) through the channel region (130). Other embodiments of the present invention include a method of manufacturing the PMOS device (200) and a MOS device (300). |
申请公布号 |
WO2005101515(A3) |
申请公布日期 |
2006.01.12 |
申请号 |
WO2005US11801 |
申请日期 |
2005.04.04 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;BUSS, DENNIS, D. |
发明人 |
BUSS, DENNIS, D. |
分类号 |
H01L21/8238;H01L29/04;H01L29/10 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|