Nitride semiconductor light emitting element and production thereof

摘要

The nitride semiconductor light emitting device includes a nitride semiconductor underlayer ( 102 ) grown on a surface of a nitride semiconductor substrate or a surface of a nitride semiconductor substrate layer laminated over a base substrate of other than a nitride semiconductor, and a light emitting device structure having a light emitting layer ( 106 ) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer ( 103-105 ) and a p type layer ( 107-110 ) over the nitride semiconductor underlayer. It includes a depression (D) not flattened on a surface of the light emitting device structure even after growth of the light emitting device structure.