Halbleitermodul

摘要

An IGBT module including a plurality of IGBT single modules each having a plurality of IGBT chips (31a, 31b), a diode chip (32a, 32b), an emitter terminal (E1; E2) and a collector terminal (C1; C2), these being disposed on one surface of an insulation plate (11a; 11b) through electrode plates (12a, 12b), a metal substrate (20) mounting the isolation plates (11a, 11b) of the plurality of IGBT single modules on one surface and a resin case (50) bonded on the surface of said metal substrate (20) and incorporating said IGBT single module. According to the invention the emitter terminals (E1, E2) and the collector terminals (C1, C2) of said plurality of IGBT single modules are exposed on an upper surface of said resin case (50), the emitter terminals (E1, E2) are disposed side by side on a straight line parallel with and near the front edge of said metal substrate (20), the collector terminals (C1) are disposed side by side on a straight line parallel with the straight line on which said emitter terminals (E1; E2) are disposed, and at least one protruding part (21a) is formed on the upper surface of said resin case (50) for delimiting said emitter terminals (E1, E2) from said collector terminals (C1, C2).