| 摘要 |
PROBLEM TO BE SOLVED: To provide an atmospheric pressure chemical vapor deposition apparatus having excellent practicality capable of enhancing the production efficiency by improving the quality of an oxide film deposited on a substrate and increasing the film deposition rate. SOLUTION: The atmospheric pressure chemical vapor deposition apparatus deposits an oxide film on both sides of a substrate by blowing material gas consisting of an evaporated film deposition material and carrier gas onto the substrate 1 heated under the atmospheric pressure by a material spraying means 10, and comprises a first film deposition chamber 2 to deposit the oxide film by blowing the material gas onto one side of the substrate 1, and a second film deposition chamber 3 to deposit the oxide film by blowing the material gas onto the opposite side of the substrate 1. When depositing the oxide film on one side of the substrate 1 in the first film deposition chamber 2 or the second film deposition chamber 3, a heating means 4 to heat the opposite side of the substrate is provided on any one of or both of the first film deposition chamber 2 and the second film deposition chamber 3, a conveying means 5 capable of successively conveying the substrate 1 to the first film deposition chamber 2 and the second film deposition chamber 3 is provided, and the oxide film is successively deposited on both sides of the substrate 1 by conveying the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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