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发明名称
METHOD FOR FORMING INTER-DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE
摘要
申请公布号
KR100531467(B1)
申请公布日期
2005.11.28
申请号
KR19990048718
申请日期
1999.11.05
申请人
发明人
分类号
H01L21/31;(IPC1-7):H01L21/31
主分类号
H01L21/31
代理机构
代理人
主权项
地址
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