| 摘要 |
PROBLEM TO BE SOLVED: To enable control of a threshold voltage within the predetermined range, by lowering the same threshold voltage and also restrain increase in gate leak current in a semiconductor device, provided with an n-type MOSFET and a p-type MOSFET including a high dielectric constant. SOLUTION: The semiconductor device 100 is provided with a silicon substrate 102, the n-type MOSFET 118 formed over the silicon substrate 102 to include a first high dielectric constant film 111 and a polycrystalline silicon film 114, and the p-type MOSFET 120 formed over the silicon substrate 102, in parallel with the n-type MOSFET 118 to include a second high dielectric constant film 112 and a polycrystalline silicon film 114. The film thickness of the second high dielectric constant film 112 is made thinner than that of the first high dielectric constant film 111. The first high dielectric constant film 111 and the second high dielectric constant film 112 include one or two or more elements selected from among a group consisting of Hf and Zr. COPYRIGHT: (C)2006,JPO&NCIPI |
