Semiconductor device, has two tunnel FETs of opposite conductivity types arranged in substrate

摘要

The semiconductor device includes a tunnel-field effect transistor of a first conductivity type in a substrate (107). A second tunnel-field effect transistor of a second conductivity type is provided in the substrate. The substrate is preferably intrinsic, or lightly doped. The substrate may be part of a silicon wafer, an SiGe wafer or a strained silicon wafer.