Method for barc over-etch time adjust with real-time process feedback

摘要

A method for determining the anti-reflective coating (or bottom anti-reflective coating) over-etch time adjust with real-time process feedback is presented. The critical dimension CD_resist of the patterned photoresist is measured and a first wafer with median values chosen ( 101 ) from a lot. A first time t* is found ( 102 ) and used to form the desired structure. Using the measured critical dimension of the formed structure on the first wafer a second time t_lot is found ( 104 ). Finally, an over-etch time t(x) is found and used to etch the remaining wafers in the lot ( 106 ).