| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To relieve stress generated directly below an electrode pad 2 in a process for connecting an Au wire to the electrode pad 2 or process for forming an Au bump. <P>SOLUTION: In the semiconductor device, a wiring layer 15 formed directly below an electrode pad 2 via an insulating layer 4 has a trapezoid edge. It is preferable that the trapezoid having an interior angle of approximately 45°at a base side is made via an insulating layer 4 below the electrode pad 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
| 申请公布号 |
JP2005294718(A) |
申请公布日期 |
2005.10.20 |
| 申请号 |
JP20040110799 |
申请日期 |
2004.04.05 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TAKAHASHI MASAO;KUWABARA KIMIHITO;HAMAYA TAKESHI;UEDA KENJI;FUKUDA TOSHIYUKI |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/60;(IPC1-7):H01L21/320 |
主分类号 |
H01L23/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
