发明名称 |
Method of fabricating semiconductor by nitrogen doping of silicon film |
摘要 |
A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N<SUB>2</SUB>, is activated or ionized in a reactor before it is deposited on the substrate.
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申请公布号 |
US2005233553(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050097445 |
申请日期 |
2005.04.04 |
申请人 |
KOUNTZ MICHAEL;ENGLE GEORGE;EVERS STEVEN |
发明人 |
KOUNTZ MICHAEL;ENGLE GEORGE;EVERS STEVEN |
分类号 |
C23C16/24;C23C16/34;H01L21/205;H01L21/365;(IPC1-7):H01L21/365 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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