METHOD FOR FORMING N-TYPE CONDUCTIVE LAYER IN ZINC OXIDE SURFACE LAYER

摘要

PROBLEM TO BE SOLVED: To solve the problem that aluminum can not be added at a well-controlled concentration to a surface layer and a thin film in a usual aluminum addition method to zinc oxide though it is simultaneous addition in crystal growth. SOLUTION: After aluminum ion is uniformly injected to zinc oxide single crystal or zinc oxide thin film crystal at a room temperature, it is subjected to heat treatment in argon gas atmosphere. Consequently, an n-type conductive layer of good quality is formed in a surface layer of the single crystal or thin film crystal and damage generated in crystal in the ion implantation is recovered by heat treatment, and electron mobility thereof is at least doubled when compared to that before implantation. COPYRIGHT: (C)2006,JPO&NCIPI