发明名称 |
Verfahren zum Bilden einer Verbindungsleitung |
摘要 |
A method of forming an interconnection line of a semiconductor device includes the steps of forming an insulating layer on a substrate, forming a contact hole in the insulating layer, forming a first conductive material layer in the contact hole so that a top surface level of the first conductive material layer is the same as or higher than a top surface level of the insulating layer and so that a portion of the first conductive material layer remains on the insulating layer, and forming a second conductive material layer on the first conductive material layer as the portion of the first conductive material layer remaining on the insulating layer is removed. |
申请公布号 |
DE19723096(B4) |
申请公布日期 |
2005.09.29 |
申请号 |
DE1997123096 |
申请日期 |
1997.06.02 |
申请人 |
LG SEMICON CO. LTD., CHEONGJU |
发明人 |
JUN, YOUNG-KWON |
分类号 |
H01L21/3213;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3213 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|