| 发明名称 |
Addressing of memory matrix |
| 摘要 |
A method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array.
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| 申请公布号 |
US6950330(B2) |
申请公布日期 |
2005.09.27 |
| 申请号 |
US20040934573 |
申请日期 |
2004.09.07 |
| 申请人 |
THIN FILM ELECTRONICS ASA |
发明人 |
THOMPSON MICHAEL O.;NORDAL PER-ERIK;GUDESEN HANS GUDE;CARLSSON JOHAN;GUSTAFSSON GOERAN |
| 分类号 |
G02F1/133;G09G3/20;G09G3/36;G11C7/06;G11C7/10;G11C8/18;G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G02F1/133 |
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