MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To terminate a large amount of dangling bonds existing in gate insulating film or element region by heavy hydrogen. SOLUTION: The method comprises the steps of: forming a semiconductor device on a semiconductor substrate; forming silicon oxide film including nitrogen on the semiconductor device; introducing the heavy hydrogen to the silicon oxide film including the nitrogen; and diffusing the heavy hydrogen by heating the semiconductor substrate. In addition, the method comprises the steps of: forming element isolation film consisting of the silicon oxide film including the nitrogen; introducing the heavy hydrogen to the element isolation film; forming the semiconductor device to element region in the semiconductor substrate divided in zone by the element isolation film; and diffusing the heavy hydrogen by heating the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI