Deuterium incorporated nitride

摘要

A method of forming a semiconductor structure comprises forming an etch-stop layer comprising nitride, on a stack. The stack is on a semiconductor substrate, and the stack comprises (i) a gate layer. The forming is by CVD with a gas comprising a first compound which is Si_xL_2x, and a second compound comprising nitrogen and deuterium, L is an amino group, and X is 1 or 2.