| 摘要 |
A semiconductor device having stable device characteristics, in which variation in contact resistance between silicon and poly-silicon or between poly-silicon and poly-silicon is reduced. In a cleaning process before forming an upper layer poly-silicon film, a treatment is conducted to form a thin uniform oxide film on the surface of silicon. After forming the upper layer poly-silicon film 11, a removed portion is uniformly formed on the thin uniform oxide film by applying a short time, high temperature annealing treatment.
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