| 发明名称 |
Semiconductor device for power MOS transistor module |
| 摘要 |
A first transistor has a first main electrode region which is formed so that these are subdivided into a plurality of first isolated island region. A second transistor has its first main electrode region which are divided into a plurality of second isolated island regions in close proximity to the array of first island regions.
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| 申请公布号 |
US6940128(B1) |
申请公布日期 |
2005.09.06 |
| 申请号 |
US20040876483 |
申请日期 |
2004.06.28 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUKI HIROBUMI;OOTA TSUYOSHI;HIYAMA YUJI |
| 分类号 |
H01L27/04;H01L21/822;H01L21/8234;H01L23/482;H01L23/62;H01L27/06;H01L27/088;H01L29/423;H01L29/76;H01L29/78;H01M2/34;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/04 |
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