PLASMA PROCESSING METHOD AND APPARATUS

摘要

In the present plasma processing method, a certain process gas is supplied into a plasma production chamber (10) in which a substrate to be processed (W) is placed, and the process gas is changed into a plasma. A certain plasma process is then conducted on the substrate (W) with this plasma. By independently controlling the spatial distribution of the plasma density and the spatial distribution of the density of radicals in the plasma in relation to the substrate (W) using an opposed portion (34) facing to the substrate (W), a certain processing state can be attained along the entire surface of the substrate (W) to be processed.