| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method of a gate electrode that does not require a large-scale device, is superior in the utilization ratio of raw materials and handling, and can reduce wastes, and to provide a manufacturing method of a device. <P>SOLUTION: In the method for forming the gate electrode containing the doped silicon film, a process for forming the doped silicon film provides a method for forming the gate electrode, including a process for coating the upper portion of the substrate with at least a liquid silicon material. In the method for manufacturing the device, the formation method of the gate electrode is used. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
