| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be readily fabricated and operated at a high speed over a wide range of temperatures. SOLUTION: This semiconductor device comprises a collector layer 107 made of nitride semiconductors, a base layer 105, a resonance tunnel layer, and an emitter layer 102. The collector layer 107, the base layer 105 and the emitter layer 102 are constituted of n-type semiconductors respectively. The resonance tunnel layer comprises a first spacer layer 202, a first barrier layer 103a whose band gap is larger than that of the first spacer later 202, a well layer 109 whose band gap is smaller than that of the first barrier layer 103a, a second barrier layer 103b whose band gap is larger than that of the well layer 109, and a second spacer layer 104 whose band gap is smaller than that of the second barrier layer 103b. The band gap of the first spacer layer 202 is smaller than that of the second spacer layer 104. COPYRIGHT: (C)2005,JPO&NCIPI
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