| 摘要 |
Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Al<SUB>x1</SUB>In<SUB>y1</SUB>Ga<SUB>(1-x1-y1)</SUB>N (where 0<=X<SUB>1</SUB><=1, 0<=Y<SUB>1</SUB><=1, AND 0<=X<SUB>1</SUB>+y<SUB>1</SUB><=1), a multiple quantum well-structured active layer made of undoped In<SUB>A</SUB>Ga<SUB>1-A</SUB>N (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type In<SUB>y2</SUB>Ga<SUB>1-y2</SUB>N (where 0<=Y<SUB>2</SUB><1) formed on the active layer and a second layer made of p-type Al<SUB>x3</SUB>In<SUB>y3</SUB>Ga<SUB>(1-x3-y3)</SUB>N (where 0<X<SUB>3</SUB><=1, 0<=Y<SUB>3</SUB><=1, AND 0<X<SUB>3</SUB>+y<SUB>3</SUB><=1) formed on the first layer.
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