| 摘要 |
PROBLEM TO BE SOLVED: To disclose a semiconductor memory device and a data writing and reading method for the device. SOLUTION: By a designated switching means, this device precharges a pair of local data lines connected to a pair of bit lines, a pair of a first and a second global data lines connected to the pair of local data lines, and the pair of the first global data lines to a first voltage level, and precharges the pair of the second global data lines to a second voltage level. Accordingly, a current exhausted at the time of precharging operation can be lessened and a write rate can be improved, and a voltage difference between the pair of the global data lines does not decrease at the time of read operation, an undesirable impact for a read rate can be prevented. COPYRIGHT: (C)2005,JPO&NCIPI
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