| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device by reducing a stress applied to an external terminal. <P>SOLUTION: The manufacturing method for a semiconductor device includes a step (a) to form an insulating layer 18 in a semiconductor substrate 10 with an integrated circuit 12 so that a second area is made lower than a first area, a step (b) to form a resin layer 20 in a manner to arrange a peripheral end part in the second area on the first and second areas, a step (c) to form a wiring layer 30 so that it may reach the resin layer 20, and a step (d) to form an external terminal 38 to be electrically connected with the wiring layer 30. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
