发明名称 ELECTRON SOURCE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an electron source with improved electron emission efficiency and prolonged life, in which, the generation of deterioration or breakage of an insulation layer is reduced. <P>SOLUTION: The electron source has a first electrode, a second electrode arranged in opposition to the first electrode, and an electrode interval area which forms an electron emission part of a diode structure together with the first and second electrodes. The electrode interval area forming the electron emission part of a diode structure is formed so that the current-voltage property of the diode structure does not have negative resistance at normal temperature obtained by oxidizing the first electrode with a current density for chemical reaction of≤12μA/cm<SP>2</SP>, and a thickness of≥10 nm and≤13.3 nm. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005191012(A) 申请公布日期 2005.07.14
申请号 JP20050009155 申请日期 2005.01.17
申请人 HITACHI LTD 发明人 KUSUNOKI TOSHIAKI;SUZUKI MUTSUMI;SAGAWA MASAKAZU;OKAI MAKOTO;ISHIZAKA AKITOSHI
分类号 H01J1/312;(IPC1-7):H01J1/312 主分类号 H01J1/312
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