| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring structure in which filling of a hole can be improved, and to enhance yield of semiconductor device. SOLUTION: The semiconductor device comprises a first layer having lower layer wiring 1 formed by filling a first groove with a conductive material, and a second layer formed on the first layer and having upper layer wiring 8 formed by filling a trench 3 extending down to a predetermined depth from the upper surface with a conductive material, a via 9 formed by filling a contact hole 4 extending down to the lower layer wiring 1 from the bottom face of the trench 3 with a conductive material, and a via 10 formed by filling an opening extending down to the lower layer wiring 1 from the upper surface with the conductive material. COPYRIGHT: (C)2005,JPO&NCIPI
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