| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for forming a recombination layer which restrains a dark current, without raising the manufacturing cost, and to provide a manufacturing method of a solid-state image sensing element, and the solid-state imaging element. SOLUTION: A resist mask, whose isolation layer is opened, is provided to the upper surface of the semiconductor substrate provided with an isolation layer, and an isolation diffusion layer, consisting of an impurity layer, is formed by implanting impurities to the lower side of the isolation layer, and impurities are implanted from the opening of the resist mask in an oblique direction to the semiconductor substrate. Consequently, a recombination layer, consisting of an impurity layer which is formed by extending the edge of the isolation diffusion impurity layer, is formed. Especially, the size of the recombination layer, consisting of the impurity layer, is adjusted by changing the end edge shape of the opening provided to the resist mask. COPYRIGHT: (C)2005,JPO&NCIPI
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