INSPECTING METHOD OF SILICON SINGLE CRYSTAL, MANUFACTURING METHOD OF SILICON WAFER AND MANUFACTURING METHOD OF EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide the inspecting method of silicon single crystal, which is capable of discriminating a single crystal which permits the manufacture of an epitaxial wafer having a required wafer quality by estimating a BMD density after manufacturing the epitaxial wafer in a stage when the silicon single crystal is raised. SOLUTION: The inspecting method of silicon single crystal comprises at least a manufacturing process of wafer for inspection wherein the wafer for inspection is manufactured from the silicon single crystal, a false epitaxial heat treatment process wherein heat treatment is applied on the manufactured wafer for inspection under the same heat treating condition as that applied upon manufacturing the epitaxial wafer, and a BMD density measuring process wherein the density of bulk micro defect (BMD) in the wafer is measured by applying oxygen deposition heat treatment for growing up oxygen deposit on the wafer for inspection on which the false epitaxial heat treatment process has been applied. COPYRIGHT: (C)2005,JPO&NCIPI