发明名称 |
Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique |
摘要 |
The present invention provides a thin channel MOSFET having low external resistance. In broad terms, a silicon-on-insulator structure comprising a SOI layer located atop a buried insulating layer, said SOI layer having a channel region which is thinned by the presence of an underlying localized oxide region that is located on top of and in contact with said buried insulating layer; and a gate region located atop said SOI layer, wherein said localized oxide region is self-aligned with the gate region. A method for forming the inventive MOSFET is also provided comprising forming a dummy gate region atop a substrate; implanting oxide forming dopant through said dummy gate to create a localized oxide region in a portion of the substrate aligned to the dummy gate region that thins a channel region; forming source/drain extension regions abutting said channel region; and replacing the dummy gate with a gate conductor.
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申请公布号 |
US2005116289(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20030725849 |
申请日期 |
2003.12.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOYD DIANE C.;DORIS BRUCE B.;IEONG MEIKEI;SADANA DEVENDRA K. |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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