发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR WRITING DATA INTO FLASH MEMORY
摘要 A source block (B0) and the logical page number ("8") of a write target page are identified from the logical address of the write target page. Data objects (DN8, DN9, ..., DN12) to be written, which a host stores in a page buffer (2), are written into the data areas (DA) of the pages (Q0, Q1, ..., Q4) of a destination block (Bn), starting from the top page (Q0) in sequence. The logical page number ("8") of the write target page is written into the redundant area (RA) of the top page (Q0). The physical page number ("6=8-2") of the write target page is identified, based on the logical page number ("8") of the write target page and the page offset ("2") of the source block (B0.) . When notified by the host of the end of the sending of the data objects (DN8, ..., DN12), the data items (D13, ..., D31, D0, D1, ..., D7) in the source block (B0) are transferred to the pages (Q5, Q6, ..., Q31) in the destination block (Bn) via the page buffer (2) sequentially and cyclically, starting from the page (P11) situated cyclically behind the write target page (P6) by the number ("5") of pages of the data objects (DN8, ..., DN12). <IMAGE>
申请公布号 EP1533702(A1) 申请公布日期 2005.05.25
申请号 EP20030791270 申请日期 2003.08.25
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 INAGAKI, YOSHIHISA;HONDA, TOSHIYUKI
分类号 G06F12/00;G06F12/02;G06F12/08;(IPC1-7):G06F12/00 主分类号 G06F12/00
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