СПОСОБ ПОЛУЧЕНИЯ СТРУКТУР КРЕМНИЙ-НА-ИЗОЛЯТОРЕ

摘要

FIELD: semiconductor engineering; producing up-to-date materials for microelectronics. ^ SUBSTANCE: proposed method for producing silicon-on-insulator structure involves hydrogen implantation in silicon wafer followed by chemical treatment of the latter and substrate, jointing of silicon wafer with substrate, jointing and separation along implanted layer of wafer with cut-off silicon layer being transferred to substrate; upon separation along implanted layer wafer is annealed to remove radiation defects and additionally annealed to provide for dissolution of oxygen precipitates introduced in material during thermal pretreatment processes. Annealing intended to remove radiation defects is conducted at 1100 °C for 0.5 - 1 h. Hydrogen is implanted in silicon wafer through pre-grown thin silicon oxide layer of 20 - 50 nm which is then removed. Proposed method uses for implantation hydrogen ions H+ 2 at dose rate of (2.5 - 5) x 1016 cm2. Silicon wafer is joined to and separated from silicon wafer along its implanted layer at temperature ranging between 300 and 600 °C for 0.5 - 2 h. Silicon wafer is joined to and separated from substrate in vacuum of 10 - 105 Pa and further jointing and separation along implanted layer of silicon wafer is conducted at temperature ranging between 300 and 600 °C for 0.6 - 2 h. Additional annealing resulting in dissolution of oxygen precipitates introduced in material during its pretreatment processes is conducted in wet oxygen atmosphere at temperature of 1200 °C for 0.5 - 2 h. Additional annealing resulting in dissolution of oxygen precipitates introduced in material during thermal pretreatment is conducted in nitrogen atmosphere at temperature of 1200°C for 0.5 - 2 h. ^ EFFECT: ability of eliminating oxygen precipitates from silicon-on-insulator structures. ^ 15 cl