发明名称 INDIUM-CONTAINING SEMICONDUCTOR METAL OXIDE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductive metal oxide which can be suitably used for a photocatalyst, a solar battery, a light-emitting device or a photodetector, by drastically expanding the functional wavelength range of a semiconductive metal oxide, whose application has been limited to the ultraviolet range, toward the long-wavelength region. SOLUTION: The indium-containing semiconductive metal oxide is derived from the semiconductive metal oxide which contains an InO<SB>6</SB>octahedron wherein six oxygen atoms are coordinated to a trivalent In in a crystal structure and has a photoabsorption band within the ultraviolet region. The indium-containing semiconductive metal oxide is obtained by removing one or two oxygen atoms from the InO<SB>6</SB>octahedron present at the surface or within the semiconductive metal oxide. The indium-containing semiconductive metal oxide has an InO<SB>5</SB>polyhedron wherein oxygen atoms are pentacoordinated or an InO<SB>4</SB>tetrahedron structure wherein oxygen atoms are tetracoordinated at its surface or its interior, has a smaller band gap compared to that of the semiconductive metal oxide and has a functional wavelength range which is expanded toward the long-wavelength region. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005126296(A) 申请公布日期 2005.05.19
申请号 JP20030365360 申请日期 2003.10.24
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 OSHIKIRI MITSUTAKE
分类号 C01G15/00;(IPC1-7):C01G15/00 主分类号 C01G15/00
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