发明名称 |
Externally programmable antifuse |
摘要 |
An antifuse circuit includes a capacitor and a detector. The capacitor is formed using standard MOS processes in a well. The gate serves as one electrode and the well serving as another electrode of the capacitor. The antifuse is programmed by externally provided radiation that can rupture the gate oxide so that the gate and well can contact each other. The gate and well form a PN junction, transforming the capacitor into a diode. The diode provides the conductive path of the programmed antifuse.
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申请公布号 |
US6888398(B2) |
申请公布日期 |
2005.05.03 |
申请号 |
US20020167802 |
申请日期 |
2002.06.11 |
申请人 |
INTEL CORPORATION |
发明人 |
KOEHL SEAN M.;SAMARA-RUBIO DEAN;YI DING |
分类号 |
G11C17/18;H01L23/525;(IPC1-7):H01H37/76 |
主分类号 |
G11C17/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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