SOI substrate with semiconductor circuit therein and method of manufacturing same

摘要

Silicon on insulator (SOI) substrate comprises a first element layer (3), a further element layer (1) and an insulating layer (2) made of a multiple barrier layer with a potential barrier and a diffusion barrier. An Independent claim is also included for a process for the production of a SOI substrate comprising forming an element layer (1) and a part of the multiple barrier layer on a first wafer (W1); forming a boundary layer (3S) and a further part of the multiple barrier layer on a second wafer (W2); joining the wafers to form a common multiple barrier layer; and separating a part of the second wafer on the boundary layer. Preferred Features: The multiple barrier layer is a SiO2/Si3N4/SiO2 layer sequence. The multiple barrier layer has an insulating layer and a conducting layer.