| 摘要 |
The present invention relates to an immersion lithographic system for patterning a workpiece arranged at an image plane and covered at least partly with a layer sensitive to electromagnetic radiation. Said system comprising a source emitting electromagnetic radiation onto an object plane, a mask adapted to receive and modulate said electromagnetic radiation at said object plane and to relay said electromagnetic radiation toward said workpiece, and an immersion medium contacting at least a portion of a final lens of said lithographic system and a portion of said workpiece, wherein an area of said contacting is restricted by capillary forces. The invention further relates to a method for patterning a workpiece and a immersion lens as such. |
