MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY PANEL

摘要

A method of manufacturing a TFT(Thin Film Transistor) display panel is provided to secure characteristics of a TFT uniformly on a whole substrate by minimizing protrusions on the surface of a polycrystal silicon film. A blocking film(111) and an amorphous silicon film are stacked on an insulation substrate(110). The amorphous silicon film is crystallized and thereby a polycrystal silicon film is formed. The insulation substrate is cleaned by UV(Ultraviolet) and then cleaned by hydrogen fluoride. The polycrystal silicon film is patterned and thereby a polycrystal silicon pattern is formed. A gate insulation film(140) is formed to cover the polycrystal silicon pattern. A semiconductor layer(150) is formed to have a doped source region(153), a doped drain region(155) and a channel region(154) into which impurity is not doped. A gate line having a gate electrode(124) is formed. The first interlayer insulation film(601) is formed to cover the semiconductor layer. A data line having a source electrode(173) and a drain electrode(173) are formed on the first interlayer insulation film. A pixel electrode(190) connected to the drain electrode is formed on the second interlayer insulation film(602).